| PART |
Description |
Maker |
| AM29F400AB-70FI AM29F400AB-70SC AM29F400AT-70SC AM |
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 70 ns, PDSO48
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 70 ns, PDSO44
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PDSO44
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PDSO48
|
Advanced Micro Devices, Inc.
|
| MR27V802D |
524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit One Time PROM(512K字6位或1M字位一次性可编程ROM 524,288字16位或1048576字8位一次性可编程（为512k字16位或100万字× 8位一次性可编程ROM的字
|
Atmel, Corp.
|
| HM514800ALJ-7 HM514800ALJ-8 HM51S4800ALJ-7 HM51480 |
70ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
80ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
|
Hitachi Semiconductor
|
| TC554001AFT-85 TC554001AFT-85L TC554001AFT-70 TC55 |
524,288-WORD BY 8-BIT STATIC RAM
|
TOSHIBA
|
| TC55VZM208AFTN-12 TC55VZM208AFTN-10 TC55VZM208AFTN |
524,288-WORD BY 8-BIT CMOS STATIC RAM
|
TOSHIBA
|
| TC55VD1636FFI-133 TC55VD1636FFI-150 |
524,288-WORD BY 36-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM
|
TOSHIBA
|
| MSM56V16160F |
2-Bank x 524,288 Word x 16 Bit SYNCHRONOUS DYNAMIC RAM
|
OKI electronic components
OKI[OKI electronic componets]
|
| MD56V62320 |
4-Bank x 524,288-Word x 32-Bit SYNCHRONOUS DYNAMIC RAM
|
OKI SEMICONDUCTOR CO., LTD.
|
| TC55VD818FFI-133 |
524,288-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM
|
TOSHIBA
|
